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Visit USCOPhysics and technology of high-K gate dielectrics II proceedings of the 2nd International symposium on High Dielectric Constant Materials : materials science, processing, reliability, and manufacturing issues : held in Orlando, Florida, October 12-16, 2003 editors, Samares Kar, Rajendra Singh, Durgamadhab Misra ... [et al.]
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Copyright Title
Physics and technology of high-K gate dielectrics II proceedings of the 2nd International symposium on High Dielectric Constant Materials : materials science, processing, reliability, and manufacturing issues : held in Orlando, Florida, October 12-16, 2003 editors, Samares Kar, Rajendra Singh, Durgamadhab Misra ... [et al.]
Status
Published
on 15 Jun 2007
Year of Creation
2004
Copyright Claimant
Electrochemical Society, Inc. (ECS) (employer for hire)
Registration Number
TX0005986627
on 15 Jun 2007Copyright Summary
The U.S. Copyright record (Registration Number: TX0005986627) dated 15 Jun 2007, pertains to an electronic file (eService) titled "Physics and technology of high-K gate dielectrics II proceedings of the 2nd International symposium on High Dielectric Constant Materials : materials science, processing, reliability, and manufacturing issues : held in Orlando, Florida, October 12-16, 2003 editors, Samares Kar, Rajendra Singh, Durgamadhab Misra ... [et al.]" created in 2004. The copyright holder is Electrochemical Society, Inc. (ECS) (employer for hire), known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Electrochemical Society, Inc. (ECS) (employer for hire).
Application Details
Registration Number
TX0005986627
Registration Date
6/15/2007
Year of Creation
2004
Place of First Publication
Pennington, NJ
Publisher Name
ECS
Agency Marc Code
DLC-CO
Record Status
New
Corporate Author
Electrochemical Society, Inc ECS High Dielectric Constant Materials, International Symposium on
Physical Description
490 p
Series Statement
Proceedings vol. 2003-22
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