Device Engineering of AlGaN/GaN HEMTs for Applications in Power-Electronic and Sensing

Text Registration

Device Engineering of AlGaN/GaN HEMTs for Applications in Power-Electronic and Sensing

Status

Published

on 2 Jul 2019

Year of Creation

2019

Isra Mahaboob

Registration Number

TX0008769719

on 2 Jul 2019

The U.S. Copyright record (Registration Number: TX0008769719) dated 2 Jul 2019, pertains to an electronic file (eService) titled "Device Engineering of AlGaN/GaN HEMTs for Applications in Power-Electronic and Sensing" created in 2019. The copyright holder is Isra Mahaboob, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Isra Mahaboob.

Isra Mahaboob

Application Details

Registration Number

TX0008769719

Registration Date

7/2/2019

Year of Creation

2019

Agency Marc Code

DLC-CO

Record Status

New

Physical Description

Electronic file (eService)

First Publication Nation

United States

Personal Authors

Isra Mahaboob

Notes

Rights Note: Mark Dill, ProQuest-CSA, LLC, 789 E. Eisenhower Parkway, Ann Arbor, MI, 48108-3218, United States, (800) 521-0600, disspub@proquest.com

Statements

Application Title Statement: Device Engineering of AlGaN/GaN HEMTs for Applications in Power-Electronic and Sensing

Author Statement: Isra Mahaboob Citizenship: not known Authorship: text

Notes

Rights Note: Mark Dill, ProQuest-CSA, LLC, 789 E. Eisenhower Parkway, Ann Arbor, MI, 48108-3218, United States, (800) 521-0600, disspub@proquest.com

Statements

Application Title Statement: Device Engineering of AlGaN/GaN HEMTs for Applications in Power-Electronic and Sensing

Author Statement: Isra Mahaboob Citizenship: not known Authorship: text

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