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Device Engineering of AlGaN/GaN HEMTs for Applications in Power-Electronic and Sensing
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Copyright Title

Device Engineering of AlGaN/GaN HEMTs for Applications in Power-Electronic and Sensing

Status

Published

on 2 Jul 2019
Year of Creation
2019
Copyright Claimant
Isra Mahaboob
Registration Number
TX0008769719
on 2 Jul 2019

Copyright Summary


The U.S. Copyright record (Registration Number: TX0008769719) dated 2 Jul 2019, pertains to an electronic file (eService) titled "Device Engineering of AlGaN/GaN HEMTs for Applications in Power-Electronic and Sensing" created in 2019. The copyright holder is Isra Mahaboob, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Isra Mahaboob.

Copyright Details


Copyright Claimant
Isra Mahaboob

Application Details


Registration Number
TX0008769719
Registration Date
7/2/2019
Year of Creation
2019
Agency Marc Code
DLC-CO
Record Status
New
Physical Description
Electronic file (eService)
First Publication Nation
United States

Personal Authors


Notes


Rights Note: Mark Dill, ProQuest-CSA, LLC, 789 E. Eisenhower Parkway, Ann Arbor, MI, 48108-3218, United States, (800) 521-0600, disspub@proquest.com

Statements


Application Title Statement: Device Engineering of AlGaN/GaN HEMTs for Applications in Power-Electronic and Sensing
Author Statement: Isra Mahaboob Citizenship: not known Authorship: text
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