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Wet Etching of p-GaN for Crystallographically Smooth Vertical Sidewalls
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Copyright Title

Wet Etching of p-GaN for Crystallographically Smooth Vertical Sidewalls

Status

Published

on 14 Oct 2019
Year of Creation
2019
Copyright Claimant
Jui-Yuan Hsu
Registration Number
TX0008799344
on 14 Oct 2019

Copyright Summary


The U.S. Copyright record (Registration Number: TX0008799344) dated 14 Oct 2019, pertains to an electronic file (eService) titled "Wet Etching of p-GaN for Crystallographically Smooth Vertical Sidewalls" created in 2019. The copyright holder is Jui-Yuan Hsu, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Jui-Yuan Hsu.

Copyright Details


Copyright Claimant
Jui-Yuan Hsu

Application Details


Registration Number
TX0008799344
Registration Date
10/14/2019
Year of Creation
2019
Agency Marc Code
DLC-CO
Record Status
New
Physical Description
Electronic file (eService)
First Publication Nation
United States

Personal Authors


Notes


Rights Note: Mark Dill, ProQuest-CSA, LLC, 789 E. Eisenhower Parkway, Ann Arbor, MI, 48108-3218, United States, (800) 521-0600, disspub@proquest.com

Statements


Application Title Statement: Wet Etching of p-GaN for Crystallographically Smooth Vertical Sidewalls
Author Statement: Jui-Yuan (Steven) Hsu Citizenship: not known Authorship: text
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