Dilute-Impurity III-Nitride Semiconductor Band Structure Modelling and Novel Oxide Dielectrics

Text Registration

Dilute-Impurity III-Nitride Semiconductor Band Structure Modelling and Novel Oxide Dielectrics

Status

Published

on 15 Mar 2021

Year of Creation

2021

Justin C. Goodrich

Registration Number

TX0008950565

on 15 Mar 2021

The U.S. Copyright record (Registration Number: TX0008950565) dated 15 Mar 2021, pertains to an electronic file (eService) titled "Dilute-Impurity III-Nitride Semiconductor Band Structure Modelling and Novel Oxide Dielectrics" created in 2021. The copyright holder is Justin C. Goodrich, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Justin C. Goodrich.

Justin C. Goodrich

Application Details

Registration Number

TX0008950565

Registration Date

3/15/2021

Year of Creation

2021

Agency Marc Code

DLC-CO

Record Status

New

Physical Description

Electronic file (eService)

First Publication Nation

United States

Personal Authors

Justin C Goodrich

Notes

Rights Note: Mark Dill, ProQuest, LLC, 789 E. Eisenhower Parkway, Ann Arbor, MI, 48108-3218, United States, (800) 521-0600, disspub@proquest.com

Statements

Application Title Statement: Dilute-Impurity III-Nitride Semiconductor Band Structure Modelling and Novel Oxide Dielectrics

Author Statement: Justin C. Goodrich Citizenship: not known Authorship: text

Notes

Rights Note: Mark Dill, ProQuest, LLC, 789 E. Eisenhower Parkway, Ann Arbor, MI, 48108-3218, United States, (800) 521-0600, disspub@proquest.com

Statements

Application Title Statement: Dilute-Impurity III-Nitride Semiconductor Band Structure Modelling and Novel Oxide Dielectrics

Author Statement: Justin C. Goodrich Citizenship: not known Authorship: text

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