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Visit USCOEnhanced Photogeneration of Carriers in a Semiconductor via Coupling Across a Non-isothermal Nanoscale Vacuum Gap
Text Registration
Copyright Title
Enhanced Photogeneration of Carriers in a Semiconductor via Coupling Across a Non-isothermal Nanoscale Vacuum Gap
Status
Published
on 26 Mar 2015
Year of Creation
2001
Copyright Claimant
Massachusetts Institute of Technology
Registration Number
TX0008089124
on 26 Mar 2015Copyright Summary
The U.S. Copyright record (Registration Number: TX0008089124) dated 26 Mar 2015, pertains to an electronic file (eService) titled "Enhanced Photogeneration of Carriers in a Semiconductor via Coupling Across a Non-isothermal Nanoscale Vacuum Gap" created in 2001. The copyright holder is Massachusetts Institute of Technology, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Massachusetts Institute of Technology.
Application Details
Registration Number
TX0008089124
Registration Date
3/26/2015
Year of Creation
2001
Agency Marc Code
DLC-CO
Record Status
Changed
Corporate Author
Charles Stark Draper Laboratory Inc Massachusetts Institute of Technology
Physical Description
Electronic file (eService)
First Publication Nation
United States
Notes
Rights Note: Michelle Kearns, The Charles Stark Draper Laboratory Inc, 555 Technology Sq, Cambridge, MA, 02139, United States, (617) 258-2410, mkearns@draper.com
Host Item Entry: Applied Physics Letters vol. 79, no. 12, 17Sept2001
Local Copyright Note: C.O. correspondence
Statements
Application Title Statement: Enhanced Photogeneration of Carriers in a Semiconductor via Coupling Across a Non-isothermal Nanoscale Vacuum Gap
Author Statement: The Charles Stark Draper Laboratory Inc employer for hire Domicile: United States Citizenship: United States Authorship: text Massachusetts Institute of Technology employer for hire Domicile: United States Citizenship: United States Authorship: text
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